Technical Fellow & Principal Scientist
Transphorm, California, United States
Rakesh Lal serves as a Technical Fellow at Transphorm. Amongst other things, his responsibilities include investigating novel devices and physical reliability. He has worked on the structure and reliability of GaN HEMTs and four quadrant switches. His theories and experiments on wear out and failure mechanisms in GaN HEMTs have been instrumental for qualifying Transphorm’s GaN switches. Prior to Transphorm, he was a professor at IIT Bombay and a visiting professor at UCSB and NTU, Singapore. Research interests have spanned device physics & degradation; radiation hard devices and radiation detectors; electrochemical & biosensors, MEMS & sensor systems.
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