In this paper, a wire-bondless SiC power module with the DBC substrate integrated microchannel cooler is proposed to achieve low parasitics, low chip junction-to-coolant thermal resistance and high power density co-optimization. Flip-chip bonding is utilized to realize ultra-low power loop inductance to 0.93 nH. The thermal transfer coefficient of the microchannel cooler reaches up to 50 kW/m2K, which is 10x of the conventional forced liquid cooling. The high cooling capability microchannel cooler is etched into the module’s DBC substrate by femtosecond laser to achieve low bonding surface roughness and channels uniformity. This structure eliminates the solder layer, baseplate, thermal interface material and part of cooler thermal resistance. The chip junction-to-coolant thermal resistance reduces to 0.073 cm2K/W, which leads to approximately 65% reduction compared with the conventional cooling. A corresponding fabrication process is developed to enable the tight integration of the microchannel cooler within the power module. Besides, the switching and thermal performance are experimentally validated by a 200 kHz hard switching boost converter test.
