The increasing demand for high efficiency and high power density is impelling converters and devices to a limit. Wide-bandgap devices, such as GaN HEMTs, have the ability to increase power density without affecting the power losses. Multiport isolated converters are able to increase the efficiency of the converter, in particular for lower-power applications. For this reason, this paper proposes a topology, which is particularly useful for high-current applications. Moreover, this paper evaluates the different multiport resonant converters. Finally, the converter is validated by using simulation and experimental results.
