A 2x2 paralleling GaN half-bridge power module is developed, where four GaN dies are encapsulated with minimizing parasitic inductances. It is confirmed that the module board has small parasitic components by electromagnetic field simulation. We demonstrate a 3.3kW CLLC converter which is operated at the switching frequency of around 500kHz employing the developed 2x2 paralleling GaN half-bridge power module. Its power density and the peak efficiency of the CLLC board are respectively 8.8W/cc and 97.1%, which are improved by 25% and 0.3% respectively, compared with the case where four discrete GaN power transistors are employed.
