This article proposes a die-level packaging and integrating intelligent power module (IPM) with a Gallium Nitirde (GaN) half bridge and a Silicon Carbide (SiC) MOSFET half bridge. The parasitic inductances of the power loop are reduced near to 2nH. A driving strategy to suppress GaN crosstalk and gate oscillation is proposed. Double pulse test experiment of GaN half bridge has been conducted to verify electromagnetic performance of IPM. Finally, a 2.14kW boost converter based on GaN half bridge is built in this paper.
