A novel die-integrated PCB SiC MOSFET half-bridge module has been packaged and characterized. The proposed module is manufacturing-friendly and can be cost-effective. Two 1.2 kV SiC MOSFET dies are fully embedded, resulting in over 95% size reduction compared to the state-of-the-art half-bridge module with the same voltage rating. The power loop inductance is optimized and minimized to 2.3 nH. Copper filling via PCB is used to improve thermal conductivity. The insulation capability is verified to be two times higher than the rated voltage of the package. The thermal and electric performance of the developed module is presented in the paper.
