Silicon Carbide (SiC) power devices have now received wide use in EV chargers, solar inverters, energy storage systems, and server and data center power supplies. However, due to their much faster switching speed compared to Si-based devices, there still exist pitfalls that can compromise the performance of SiC devices. This work presents general design guidelines for applications using SiC power MOSFETs. Design and layout of gate drive circuit, especially for paralleled SiC switches is detailed. Use of split external gate resistors is proposed, and proved to be an effective way to eliminate gate oscillation and improve current sharing for MOSFETs in parallel
.jpg "Yuequan Hu, PhD photo")