T04 - SiC Power Devices

Technical Lecture Session Chair(s)

• 

  Fei Yang

  System Engineer
  Texas Instruments, United States
• FL

  Fang Luo

  Stony Brook University, United States

Presentations:

• 8:30 AM – 8:50 AM ET

  Comparison of SiC MOSFET Thermal Performance Under Different PWM Strategies
  

  Technical Lecture Presenter: Yu Zou – Saginaw Valley State Univ.
• 8:50 AM – 9:10 AM ET

  ClampDRIVE: An Improved Technique for SiC Cascode FET Switching Behavior Control
  

  Technical Lecture Presenter: Xueqing Larry Li – United Silicon Carbide, Inc Qorvo
• 9:10 AM – 9:30 AM ET

  10 kV SiC Thyristor for High Voltage Pulsed Power Generators
  

  Technical Lecture Presenter: Koji Nakayama – National Institute of Advanced Industrial Science and Technology
• 9:30 AM – 9:50 AM ET

  Using a Digital Gate Driver to Improve the Performance of Silicon Carbide MOSFETs
  

  Technical Lecture Presenter: Vipin Gaonkar – Microchip Technology (India) Private Limited
• 9:50 AM – 10:10 AM ET

  A Self-Powered Bidirectional DC Solid-State Circuit Breaker Based on SiC JFETs
  

  Technical Lecture Presenter: Daixin Chen – Hunan University
• 10:40 AM – 11:00 AM ET

  Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes
  

  Technical Lecture Presenter: Mohammed Amer Karout – University of Warwick
• 11:00 AM – 11:20 AM ET

  Analysis and Characterization of Four-Quadrant Switches Based Commutation Cell
  

  Technical Lecture Presenter: Ramandeep Narwal – North Carolina State University
• 11:20 AM – 11:40 AM ET

  Design Considerations for Series-Connected SiC MOSFETs Operating at 100 kV/µs
  

  Technical Lecture Presenter: Tobias Nieckula Ubostad – Norwegian University of Science and Technology