.jpg "Koji Nakayama photo")
National Institute of Advanced Industrial Science and Technology, Japan
Koji NAKAYAMA, PhD, Senior Researcher, National Institute of Advanced Industrial Science and Technology (AIST), Japan. He received the B.E., M.E. and Ph.D. degrees in 1992, 1994 and 2013, respectively, from Osaka University, Japan. In 1994, He joined Kansai Electric Power Co., Inc., Japan. From 1994 to 2000, He was involved in the maintenance, operation, construction, and management of substations in power transmission systems. He also conducted the planning of power transmission systems. From 2000 to 2003, He was on loan to SiXON Ltd. and conducted research on silicon carbide (SiC) bulk growth by sublimation method and SiC epitaxial growth by hot wall chemical vapor deposition. He also researched at Kyoto University and Kyoto Institute of Technology as a researcher. From 2003 to 2017, in Kansai Electric Power Co., Inc., He was involved in the development of silicon carbide (SiC) power devices, including SiC gate commutated turn-off (GCT) thyristors and SiC PiN diodes, and high-power all SiC inverters. He also focused on the research of "bipolar degradation," which is a problem unique to SiC bipolar device. Moreover, He conducted research on Silicon thyristors and its applications; such as high voltage direct current (HVDC) power transmission systems, static var compensators (SVCs) for power transmission systems, and exciters of power generators. In 2017, He joined AIST, Japan. Since 2017, He have been conducting research on the development of ultra-high voltage SiC IGBTs, SiC MOSFETs, SiC GTOs, SiC Thyristors, SiC PiN diodes, SiC Schottky barrier diodes, and SiC power electronics applications for electric power systems.
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Tuesday, March 21, 2023
9:10 AM – 9:30 AM ET