Vice President
Infineon Technologies AG, Germany
Dr. Peter Friedrichs was born in 1968 in Aschersleben, Germany. After achieving his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993, he started a Ph.D work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC power MOSFETs. In 1996 he joined the Corporate Research of the Siemens AG and was involved in the development of power switching devices on SiC, mainly power MOSFETs and vertical junction FETs.
Peter Friedrichs joined SiCED GmbH & Co. KG, a company being a joint venture of Siemens and Infineon and originated from the former Siemens research group, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED, responsible for all technical issues. In 2009 he achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED’s activities into Infineon in 2011 hee joined Infineon and acts currently as Vice President Silicon Carbide. He is a member of the ECPE board and coordinates external affairs related to SiC for Infineon. He holds numerous patents in the field of SiC power devices and technology and is an author or co/author of more than 50 scientific papers and conference contributions.
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Tuesday, March 21, 2023
8:55 AM – 9:20 AM ET