This presentation will cover overview of crosstalk and associated risk of failure from parasitic turn-on (PTO) that can potentially cause shoot-through event when gate to source voltage in off-state exceeds the threshold voltage Vth of the SiC MOSFET when used in high dv/dt application. Extensive tests have been conducted considering different factors impacting cross talk, such as turn-off gate bias voltage Vgs,off, external gate resistor Rg, external gate-source capacitor Cgs, miller clamp, device temperature, etc. Also, risk of parasitic turn-on has been evaluated at different turn-off voltage Vgs,off for planar and trench SiC MOSFETs. This talk will provide good guidance for engineers on how to design the SiC gate driving circuit to prevent shoot through in SiC applications.
