The higher switching frequencies of SiC power stages allows for smaller passives and more compact power modules, achieving higher power densities at increased efficiencies. However, the intrinsic faster switching speed of SiC transistors compared to even the latest IGBT technologies poses the inverter designer with many new challenges to achieve reliability and robustness. Currently, the limitation to get the maximal performance out of SiC based inverter is the gate-driver. This presentation describes the pitfalls of driving SiC and how to solve them to maximize SiC power stage performance.
