T12 - GaN Power Devices

Technical Lecture Session Chair(s)

• HY

  Hengzhao Yang

  Shanghai Tech University
• 

  Jason Neely

  Sandia National Laboratories, United States

Presentations:

• 8:30 AM – 8:50 AM ET

  GaN HEMT Improves Overall Performance in ZVS Totem Pole PFC Converters
  

  Technical Lecture Presenter: Rosario Attanasio – STMicroelectronics
• 8:50 AM – 9:10 AM ET

  Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy During Parameter Design
  

  Technical Lecture Presenter: Francesco Iannuzzo – Aalborg University
• 9:10 AM – 9:30 AM ET

  A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of GaN Power Transistors
  

  Technical Lecture Presenter: Mathias Weiser – University of Stuttgart
• 9:30 AM – 9:50 AM ET

  PCB Design Impact on GaN-Based Converter Operation
  

  Technical Lecture Presenter: Oleksandr Husev, PhD – Tallinn University of Technology
• 9:50 AM – 10:10 AM ET

  Investigation on Physical Origins of Output Capacitance Loss in Cascode GaN HEMTs
  

  Technical Lecture Presenter: Qihao Song – Virginia Tech
• 10:40 AM – 11:00 AM ET

  High Current Turn-Off of GaN HEMT for Solid-State Circuit Breaker at Cryogenic Temperatures
  

  Technical Lecture Presenter: Zhou Dong – University of Tennessee at Knoxville
• 11:00 AM – 11:20 AM ET

  Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit
  

  Technical Lecture Presenter: Bixuan Wang – CPES Virginia Tech
• 11:20 AM – 11:40 AM ET

  GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure?
  

  Technical Lecture Presenter: Ruizhe Zhang – Virginia Polytechnic Institute and State University
• 11:40 AM – 12:00 PM ET

  Voltage Reference and Zero Current Detector Monolithically Integrated on p-GaN Technology Designed for Process Corners Compensation
  

  Technical Lecture Presenter: Cedric Reymond