For high-power applications, from solar string inverters, to EVs and industrial automation, high-speed (high-frequency) switching continues to reduce the size, weight and cost of passive components, and so improve the power density and efficiency of the power systems themselves. At 150 kHz, Navitas' GeneSiC power MOSFETs with trench-assisted planar gate technology, run 25 degC cooler than standard SiC devices - reducing hotspots, and extending device lifetime by 3x.
