Wide bandgap GaN and SiC power semiconductors are predicted to win 30% of the $22B/yr legacy silicon market by 2027. Even as more suppliers enter the market, the next generations of GaNFast power ICs and GeneSiC MOSFETs show clear device leadership, with demonstrated system performance, cost and sustainability advantages. From 20 W smartphone chargers, through 20 kW bi-directional EV chargers, and on to 20 MW grid applications, proprietary monolithic GaN integration at 650/700 V and trench-assisted planar gate SiC MOSFET designs lead the charge over legacy technologies.
