In general, the rated 6V gate-source voltage of GaN HEMT is far lower than that of Si such as 12V. This causes the degradation and destruction of the device, making it difficult to safely operate in ultra high-speed switching of GaN HEMT. To solve the problem, we propose [1] 8V rated gate voltage GaN HEMT (EcoGaN). [2] unique 2 step overshoot gate-source voltage reduction circuit. By combining the two technologies, we achieved high efficiency of 94 % at 1 MHz, 48 Vin, 12 Vo / 8A half-bridge topology.
