S07 - Practical Considerations for the Application of High Power Si and SiC Modules

This seminar will discuss the issues a designer must deal with in using large, high power (high current and/or high voltage) IGBT and SiC modules including interpretation of device ratings, gate drive requirements, and providing device and system protection. The intent of this seminar is to aid the designer in choosing and applying a high power module to a new product or transitioning a design from Si to SiC. Questions and concerns a designer might have will be addressed by the various techniques and circuit examples that will be presented. Chip technology and packaging options will be discussed with special attention to the tradeoffs between silicon and silicon carbide. The practical application of SiC power devices today and in the future will be discussed. The attendee should leave the course with a better understanding of the power module, specifically as a device and how it functions in an application. The goal will be to impart an understanding of desirable features, characteristics, and limitations. This will include the application in power circuits, protection from internal and external disturbances, and an understanding of thermal design, handling, and reliability considerations. The seminar should resolve confusing and conflicting information on device data sheets.