For the sake of rapid prototyping and product development, it is desirable to comprehend radiated noise characteristics of SiC and Si devices at the earliest steps of designing new inverter systems because end products are subject to electromagnetic noise regulations. This paper introduces a method to estimate radiated noise current dependency based on the radiated noise datasets of SiC and Si IPMs obtained by applying extended double pulse test. The estimation method is then compared to the results of actual operating inverter for validation.
