T02.6 - Analytical Modelling of SiC MOSFET Based on Datasheet Parameters Considering the Dynamic Transfer Characteristics and Channel Resistance Dependency on the Drain Voltage

The dynamics of SiC MOSFET current during turn ON is impacted by the drain voltage it is switched at, due to the drain induced barrier lowering (DIBL) effect. This is however ignored in the existing analytical models available in the literature. This paper thus proposes and develops a new analytical modelling approach that models this effect by relying only on the datasheet parameters, thereby avoiding the need for expensive and time-consuming experimental methods. An experimental double pulse test (DPT) setup using 1.2kV SiC MOSFET (C3M0010602K) and Schottky diode (C4D40120D) is built to verify the findings.