As one of the most concerned attributes in wide bandgap semiconductor power electronics reliability, the thermal performance can be improved by applying discontinuous PWM strategies. Although many studies have been available regarding PWM strategies and associated power losses, the semiconductor temperature and its dependence of system operation parameters have been barely investigated. This paper is intended to provide a comprehensive investigation of SiC MOSFET temperature behaviors under different operation conditions applying different PWM strategies. Simulations were conducted for multiple mission profiles using the manufacturer-provided SiC MOSFET thermal data and the experiments were conducted to verify the comparison among PWM strategies under different operating conditions.
