We developed a 10 kV-class high-voltage SiC thyristor for pulsed power generators, which turns on without a gate signal by charging the current to the depletion layer of a drift layer. The electrical characteristics of the developed SiC thyristor were calculated using device simulation. The developed SiC thyristor has a punch-through structure and gate and field stop layers with low concentration and thin thickness. Then, a SiC thyristors were fabricated, and high breakdown voltage values of ≥10 kV were confirmed. Furthermore, the developed SiC thyristor was connected in series with a 10-kV SiC–metal–oxide–semiconductor field effect transistor, and switching tests were conducted to confirm that the SiC thyristor turned on without a gate signal.
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