In this paper, the performance of 1.2kV SiC planar MOSFETs, Trench MOSFETs and 1.2 kV SiC Cascode JFETs is compared under 3 conditions. Firstly, the devices are switched with SiC Schottky Barrier Diodes (SBDs) i.e. no contribution from the body diode. Secondly, without SiC SBDs i.e., relying entirely on the body diode. And thirdly, with both SiC SBDs and device body diodes in parallel. The turn-OFF of the diode impacts the turn-ON of the transistor, hence, the characteristic of the diode is important. Under the first condition, an additional diode is required in series with the transistor to prevent body diode operation in the 3rd quadrant. This contributes to additional conduction losses and has an impact on switching losses which is different between the Planar MOSFET, the Trench MOSFET and the Cascode JFET. Depending on the switching frequency and whether switching or conduction losses are dominant in the application, the contribution of the body diode to the losses will be different.
