A dynamic gate driving strategy is proposed to control the turn-off dVDS/dt transients for SiC power MOSFETs. Comparing with a conventional gate driver with fixed gate resistance, dynamic gate drive can effectively suppress the overshoot in VDS without a significant reduction in switching speed or increase in turn-off loss. In double pulse testing, using a 40 A, 1200 V SiC power MOSFET, the dynamic gate driver exhibits a 78% reduction in turn-off energy loss (Eoff) when compared to a conventional gate driver for a 35% overshoot.
