T07.1 - Design, Fabrication and Testing of 3.3 kV/200A SiC Half-Bridge Power Module

While commercially released SiC discrete MOSFETs and its power modules are dominated by intermediate voltages from 600 V to 1.7 kV, high voltage (>3 kV) SiC products are still rare for public access especially in the form of power modules. In this paper we started with an introduction of a self-designed 3.3 kV, 200 A SiC half-bridge power module conformed to XHP package outline, followed by an estimation of its parasitic inductance and thermal performance. Its feasibility for in-house fabrication, along with its capability to stand high voltage without partial discharge, plus an initial functionality check under double pulse test (DPT) are also evaluated.