This work presents a novel high-density half-bridge silicon carbide double-sided cooled power module. The important design features include 45-degree vertical connection blocks to provide maximum heat dissipation path, low temperature co-fired ceramic-based interposer providing mechanical strength and electrical isolation, integrated gate driver boards, and integrated temperature sensors. The fabricated module is then switched at the RMS current for driving a 200-kW segmented two-level three-phase inverter system. The junction-to-case thermal resistance of the module package is only 0.05 K/W. The power loop inductance is 11 nH and the gate loop inductance is 15 nH.
