With the arrival of power gallium nitride (GaN) technologies, PFC converters are gaining in terms of superior efficiency, increased switching frequency and higher power density, compared to the existing solutions based on silicon power MOSFETs. This paper compares the performance of silicon power MOSFETS with GaN devices. The two different technologies are compared based on a 2kW 3-channel, zero-voltage switching (ZVS), interleaved, totem pole PFC converter with hysteresis current control. Moreover, the paper provides the experimental results of efficiency, power factor and total harmonic current distortion (THDi).