GaN is occupying larger market. As one of commercial devices, cascode GaN has shown several advantages. However, its configuration brings oscillation problems. In this paper, it is the first time that the effects of gate resistors, gate driving voltages, and snubbers on self-sustained oscillations during both turn-on and turn-off transients are comprehensively and experimentally studied. It is shown that decreasing gate resistors, increasing positive driving voltage, decreasing negative driving voltage, and adding snubber circuits can suppress the self-sustained switching oscillations.