This work describes two designed and fabricated circuits for power device integration in e-mode GaN-on-Si technology and gives their main measured characteristics. The first circuit is a voltage reference designed to compensate process, voltage and temperature (PVT) variations and presents high frequency operation. The advantage of this circuit over state-of-the-art circuits is its performance of regulation, low current consumption and surface required (only 100 × 60 µm in the first prototype built). The second circuit is a zero-crossing current detector that is also designed to be insensitive to process variations.
