Experimental switching characterization for B-TRAN™ rated at 1200V/50A in TO-264 package, double-sided cooling, is reported in this paper. Both DC and switching characterizations on the wafer and packaged levels validated the predicted simulation results reported last year at APEC 2022 [1]. Packaged devices showed bidirectional operation and symmetrical performance in both directions. The breakdown voltage, on-state voltage, and current gain (β) were measured to be 1300 V, 0.2-0.6 V, and 7, respectively [2]. Double Pulse Testing (DPT) showed significant improvement over the comparative devices in the market. We obtained ultra-low conduction and switching power losses in switching modes of operation, showing the promise of utilizing B-TRAN™ in many power electronics applications such as solid-state circuit breakers (SSCB), bidirectional switching power converters, battery disconnect switches or battery test systems, IGBT common-emitter applications, and matrix converters.
