In motor drive applications, Gallium nitride (GaN) transistors are becoming widely adopted as inverter switching devices because of their advanced dynamic characteristics. In GaN FETs based half-bridge dead time reduction allows a decrease of power losses during the reverse conduction. However, switching devices in reverse conduction feature different dynamic voltage slope characteristics during the dead time depending on the switching condition. This digest presents a reduction dead time strategy that considers the voltage slopes sign and the current variation for GaN FET-based inverter leg powering an AC motor load to reduce commutation losses in the reverse conduction.
