This paper provides a comprehensive investigation of the high voltage insulated-gate bipolar transistor (IGBT) under short-circuit conditions, focusing on the impact of parasitic inductance. At first, the short-circuit performance of a 4.5 kV IGBT at different bias voltage is presented. Then, the short circuit tests are performed with different parasitic inductance. The results show a different gate-emitter voltage waveform and short-circuit time duration. A detailed analysis based on the TCAD simulation is included at the end of this paper to explain this phenomenon.
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