D06.10 - Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
Thursday, March 23, 2023
11:30 AM – 1:30 PM ET
Location: HALL WA3
Authors: Sadab Mahmud , Prakash Pandey , Samuel Atwimah , Tolen Nelson , Daniel Georgiev , Andrew Koehler , Travis Anderson , James Gallagher , Karl Hobart , Raghav Khanna
This paper presents a complete development cycle for a 1 kV vertical GaN-based diode. All the essential phases of development including design of a target growth structure, fabrication of the device, encapsulation of the high voltage diode in a suitable package and testing it in circuit boards are discussed in detail.
