D06.13 - Switching Performance Evaluation of 650 V Vertical GaN Fin JFET

This work presents the first switching performance characterization of a 650 V vertical GaN fin-channel junction field effect transistor (Fin-JFET), manufactured using GaN-on-GaN technology. Compared to similarly-rated GaN HEMTs and SiC MOSFET, the GaN Fin-JFET measured smaller specific on-resistance, die size, and output capacitance (COSS). Compared to similarly-rated GaN HEMTs and SiC MOSFETs, the vertical GaN Fin-JFET measured smaller turn-off energy (EOFF) and similar EON, suggesting its good promise for soft switching applications. Finally, a zero-voltage switching converter based on the GaN Fin-JFET half bridge was demonstrated with a switching frequency up to 1 MHz, in which the Fin-JFET’s EOFF was extracted to be merely 1.7 µJ under the 400 V/6 A switching condition.