Output capacitance (COSS) loss is generated when the COSS of a power device is charged and discharged. This work deploys a recently developed method to measure the COSS loss (EDISS) of GaN power transistors under steady-state switching, focusing on the impact of ON-state current on EDISS, as it was either not investigated or coupled with the impact of blocking voltage in prior studies. The EDISS of four mainstream commercial GaN high electron mobility transistors (HEMTs) are comprehensively characterized and show a linear EDISS increase with the conduction current. These results provide important insights from both the application and device physics standpoints.
