This article aims to explore the potential of SiC power devices in high voltage power modules, which means higher power density and reliability of insulation. The proposed packaging method is based on a double-sided heat dissipation structure, and it is determined by electric field analysis that a polyimide coating is applied to enhance the breakdown field e strength to the high electric field region in this structure. Benefiting from the packaging the power density of the module reaches 52.22W/mm3, and the module-to-chip power utilization achieves to 81%.
