IS25 - WBG Devices

Industry Session Chair(s)

• 

  Peter Comiskey, BEng(Hons)

  Director
  Cambridge GaN Devices, United Kingdom
• 

  Anuj Narain, MSEE

  Wolfspeed, United States

Presentations:

• 1:45 PM – 2:10 PM ET

  An Experimental Study on Parasitic Turn-On (PTO) Due to Crosstalk in Fast Switching Silicon Carbide (SiC) Power MOSFETs
  

  Industry Session Presenter: Shashank Mathur – Wolfspeed
• 2:10 PM – 2:35 PM ET

  Improving Switching Performance in SiC Power Modules by Better Balancing Gate Threshold Voltage Differences
  

  Industry Session Presenter: Antonia Lanzafame – STMicroelectronics
• 2:35 PM – 3:00 PM ET

  On-Chip and Inline Characterization of SiC-MOSFET Physical Parameters for Optimized Gate Drive Control
  

  Industry Session Presenter: Thoralf Rosahl – Robert Bosch GmbH
• 3:00 PM – 3:25 PM ET

  A GaN HEMT with Exceptional Gate Overvoltage Robustness
  

  Industry Session Presenter: Bixuan Wang – CPES Virginia Tech

  Industry Session Presenter: Daniel Popa