This industry session paper presents a new GaNSense Half-Bridge IC that integrates GaN power FETs, drivers, level-shifting, bootstrapping, loss-less current sensing and protection features in a small QFN 6x8 package. This simple half-bridge circuit building block eliminates complexity and enables robust, high-frequency switching operation for realizing next generation topologies. The basic functionality of each of these topologies are presented as well as their achievable frequency, efficiency and power density. Several design examples are also shown to demonstrate performance in actual application conditions.
