This presentation will highlight the benefits of using a die topside copper foil attach with copper wire bonds to further improve the performance and reliability of power interconnections in silicon carbide (SiC) power modules. The power cycling (PC) life extension of this interconnection method will be demonstrated. In addition, higher temperature operation (> 175 °C) will be showcased, which is enabled by the superior high temperature SiC power device characteristics coupled with the power interconnection technology in this work. Lastly, for the same die area, an increase in module current rating will be reported due to the improved thermal path using silver (Ag) sintering paste for the backside die attach.
