The growing efficiency and power density requirements of data center power supply units (PSUs) drive the next generation power stage development. GaN transistor featuring of small on-resistance, fast switching speed, etc., is a very promising candidate to meet the increased efficiency and power density requirement. In this paper, hybrid multi-layer Insulated Metal Substate (HML-IMS) and CerStrate technologies are proposed for GaN-based power stage of next generation PSUs to maximum the overall system performance. Results shows that both thermal management optimization and parasitic parameters reduction are obtained.
