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Thursday, Mar 23
1:45 PM – 2:10 PM ET

IS25.1 - An Experimental Study on Parasitic Turn-On (PTO) Due to Crosstalk in Fast Switching Silicon Carbide (SiC) Power MOSFETs
Location: W206
Industry Session Presenter: Shashank Mathur – Wolfspeed
WBG Devices
Thursday, Mar 23
2:10 PM – 2:35 PM ET

IS25.2 - Improving Switching Performance in SiC Power Modules by Better Balancing Gate Threshold Voltage Differences
Location: W206
Industry Session Presenter: Antonia Lanzafame – STMicroelectronics
WBG Devices
Thursday, Mar 23
2:35 PM – 3:00 PM ET

IS25.3 - On-Chip and Inline Characterization of SiC-MOSFET Physical Parameters for Optimized Gate Drive Control
Location: W206
Industry Session Presenter: Thoralf Rosahl – Robert Bosch GmbH
WBG Devices
Thursday, Mar 23
3:00 PM – 3:25 PM ET

IS25.4 - A GaN HEMT with Exceptional Gate Overvoltage Robustness
Location: W206
Industry Session Presenter: Bixuan Wang – CPES Virginia Tech
Industry Session Presenter: Daniel Popa
WBG Devices