Director of Product Marketing Nova Measuring Instruments, CA, United States
While the GAA process results in transistors with better performance and reduced power consumption, the added complexity, smaller features, and new materials present challenges for metrology.
This presentation demonstrates how three in-line metrology techniques: X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and secondary ion mass spectrometry (SIMS) can be employed to control thickness and stoichiometry of performance-critical high-k and work-function metal stacks, to monitor the strain of the SiGe and Si layers in nanosheet FETS, and to enable tighter control of the nanosheet formation process for optimized etch selectivity and ultimately better device performance at 3nm and below.
Uploading results from XPS, Raman and SIMS directly to the factory host provides the feedback needed to optimize HVM processes and for reactor matching.
