Porous semiconducting nitrides are effectively a new class of semiconducting material for use in devices such as light-emitting diodes. Porosity provides new opportunities to engineer properties including refractive index, and thermal and electrical conductivity. Sub-surface porous gallium nitride (GaN) is conventionally created by forming deep trenches using a dry-etching process. Porotech has developed a novel alternative etching process that can be mass-produced for commercial applications. This enables the creation of a variety of sub-surface porous architectures on top of which a range of devices may be grown, from light-emitting diodes to single photon sources – to native monochrome R/G/B InGaN MicroLEDs, and now with monolithic RGB full colour microLEDs and microdisplay.
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