NOS Development Division Semiconductor Energy Laboratory Co. Ltd. Atsugi, Japan
An island formation method for fabrication of a miniaturized CAAC-OS FET has been developed. With our etching process, the CAAC-OS FET, which has a gate length as small as 6.5 nm, had a high on-off drain current ratio. The high-definition display had excellent characteristics of a low lateral leakage current.
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