Employee Semiconductor Energy Laboratory Co., Ltd. Atsugi, Kagawa, Japan
A small-size oxide semiconductor field-effect transistor (OSFET) was developed as a driving transistor suited for small high-resolution displays of virtual reality/augmented reality devices. We examined the electrical characteristics of an OSFET having a channel length of 200 nm to find out its excellent saturation characteristics, high breakdown voltage, and low offstate current. A 3207-ppi organic light-emitting diode display was fabricated to examine the performance in an active panel and showed a high contrast ratio.
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