staff Semiconductor Energy Laboratory Co., Ltd. Atsugi, Kanagawa, Japan
We have investigated the total ionizing dose effect by X-rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in the space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field-effect transistor showed a negative drift in threshold voltage of less than 300 mV and substantially no degradation in subthreshold slope and mobility. After 60 hours of standing from the irradiation, approximately 40% of the threshold voltage variation was recovered.