Professor of Advanced Display Research Center Kyung Hee University Seoul, Republic of Korea
We report a very simple hotplate crystallization technique to achieve the polycrystalline InGaO (IGO) thin films at low temperature ( <400 oC). The coplanar thin film transistor (TFT) with polycrystalline IGO exhibits linear mobility over 50 cm2V-1s-1 and excellent stability under PBTS/NBTS and 85% humidity at 85oC for 2 days. We have also achieved a very fast 23 stage ring oscillator with a frequency of 2.36 MHz because of coplanar structure and high mobility. This low-cost technique is very suitable for the manufacturing of polycrystalline oxide TFT backplane for large area, high resolution AMOLED displays.
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.jpg "Jin Jang, PhD photo")