We have proposed a combination of large diameter GaN-on-Si epiwafer and high-precision, low-cost Si foundry processes as the ultimate solution to overcome the current cost and yield issues in micro LED display fabrication. It is crucial to realize GaN-on-Si epiwafers which not only have excellent LED performance but also possess excellent processability to be accepted in Si foundries. Especially, non-SEMI standard thickness substrates are typically used for GaN-on-Si epi growth to overcome strain-engineering issues but are a huge hurdle for standard foundry processes. In this article, we report how ALLOS manages to produce excellent LED performance with SEMI-standard thickness epiwafer for 200 mm GaN-on-Si epiwafers and report on the successful scaling to 300 mm diameter for GaN-on-Si epiwafers.
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