Senior Researcher BOE MLED Technology Co.,Ltd. Beijing, China (People's Republic)
Mini/Micro light-emitting-diode (LED) emissive display has attracted wide range of attentions and has a good development prospect. One of the big challenges of Mini/Micro LED display is that the attenuation degree of luminous intensity of RGB chips with increasing working temperatures are different. In this work, we deeply analyzed this phenomenon and found out the factors contributing to such phenomenon. It is found out that the attenuation degree of luminous intensity is directly related to the current density and material system of the chips. Moreover, the defect related non-radiative recombination process and the different band structures between AlGaInP system and InGaN system are regarded as the main factors contributing to the different attenuation degree of luminous intensity with increasing temperature of RGB chips.
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