For the first time, we propose a stackable vertical Channel-All-Around (CAA) IGZO FETs. The device is fabricated in a BEOL-compatible process flow where the channel and gate stack is deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device electrical performance are studied. An optimized 50nm-channel-length CAA IGZO FET achieved Ion >30µA/µm and Ioff below 1.8×10-17µA/µm at VDS = 1V.
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