President and CTO APS Research Hwaseong, Republic of Korea
This paper presents the dry etching performance and expectation of high conductive metal thin films which were hardly etching at low temperature with conventional plasma dry etching device. Dry etching was performed using a combination of H2 and HCl gases in a reactive ion etching system with low temperature susceptor and electron cyclotron resonance (ECR) plasma source that achieves high electron temperature in order to sufficient dissociation and ionization of H and Cl radical from H2 and HCl gases.
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